PHOTOLUMINESCENCE STUDY ON Hg1-xCdxTe THIN FILM IMPLANTED WITH As ION

Photoluminescence spectra of a series of MBE-grown Hg_1-xCd_xTe samples with the same mole fraction of about x≈0.39 have been measured at different temperatures from 5 to 100 K. By aid of the temperature and exciting laser power dependence of photoluminescence peak energy and relative intensity, as well as of the comparison with other measurements, four main structures dominating in the photoluminescence spectra are attributed to band to band, D^oX, A^oX and D^oA^o transitions. A deep donor state level located at about 8.5meV below the bottom of the conduction band has been observed and is determined to be due to the arsenic-occupied mercury vacancies. Two acceptor levels located at about 14.5 meV and about 31.5 meV above the top of the valance band have also been found from the measuements, which are identified as the mercury vacancies and As in anion site, respectively.     

规则结构多孔填料塔两相流动特性实验研究

本文以空气和水为工质,对规则结构多孔填料塔的气-液逆向流动特性进行了可视化实验,研究了填料塔内气一液两相流动规律.实验结果表明:当液体流量一定时,随着气体流量的增加,压力损失增大;当气体流量一定时,随着液体流量的增加,气相压力损失增加.根据实验结果提出了采用水力雷诺数、韦伯数和无量纲流动参数的填料塔内气-液两相流动阻力系数实验关联式.     

Vlasov辐射器反射特性研究

 利用矩量法导出Vlasov辐射器端口处各种模式模系数（振幅）的计算方法，并利用此方法通过数值计算研究了斜切形Vlasov辐射器的反射特性，得到了辐射器端口反射系数和斜切角度及直径波长比之间的关系。结果表明斜切形辐射器具有很小的反射系数，并从反射特性上为辐射器结构参数的选择提供了依据。     

艾滋病防治资源投入的效果分析

基于GOALS模型的基本思想,建立了效果分析模型,并针对两种不同的资金分配方案,模拟了两种方案对2006—2010年某地艾滋病流行的影响,并对模拟结果进行了分析.     

Excitation Properties of the Biological Neurons with Side-Inhibition Mechanism in Small-World Networks

We have studied the excitation properties of biophysical Hodgkin-Huxley neurons with the side-inhibition mechanism in small-world networks. The result shows that the excitation properties in the networks are preferably consistent with the characteristic properties of a brain neural system under external constant stimuli, such as fatigue effect, extreme excitation principle, and the brain neural excitation response induced by different in- tensity of noise and coupling. The results of the study might shed some light on the study of the brain nerve electrophysiology and epistemological science.     

新超导体MgCNi3的虚晶掺杂研究

用全势线性缀加平面波方法,考虑局域自旋密度近似研究虚晶掺杂MgCNi3的超导电性和磁性.计算了自旋极化能带结构、体弹性模量和它对压力的导数、原子磁矩 m 及其变化率.计算结果表明,对于电子掺杂的Mg1-xAlxCNi3(0≤x≤0.5), 超导电性和磁涨落随掺杂量的增加逐渐减小.空穴掺杂的Mg1-xNaxCNi3,在x＝0.12处出现铁磁相变,超导电性消失.在MgCNi3少量空穴掺杂区域(0≤x<0.12),表现为超导与磁涨落共存的不稳定状态.     

单脉冲和多脉冲飞秒激光对单层光学薄膜的损伤

 利用掺钛的蓝宝石飞秒激光系统输出的单脉冲和多脉冲飞秒激光(中心波长800 nm，脉宽50 fs，靶面聚焦直径Ф 40 μm)，分别对BK7玻璃基底上厚约500 nm的单层HfO₂和单层ZrO₂薄膜进行辐照，得到了这两种薄膜在1-on-1和1 000-on-1测试方法下的激光损伤阈值。实验发现，两种方法下HfO₂单层膜的阈值均比ZrO₂单层膜的阈值高。从简化的Keldysh多光子离化理论出发，认为HfO₂薄膜材料的带比ZrO₂的宽是导致上述结果的主要原因。同时，同一种薄膜的多脉冲下的阈值比单脉冲下的低，原因是多脉冲下，飞秒激光对光学薄膜的损伤存在累积效应。     

Rb（5PJ）＋Rb（5PJ）→Rb（5JS）＋Rb（nl=5D，7S）碰撞能量合并

研究了Rb(5PJ)+Rb(5PJ)→Rb(nlJ')+Rb(5S)碰撞能量合并过程,利用单模半导体激光器分别共振激发Rb原子的5P1/2或5P3/2态,利用另一与泵浦激光束反向平行的单模激光束作为吸收线探测激发态原子密度及其空间分布,吸收线分别调至5P1/2→5D3/2和5P3/2→7S1/2跃迁.由激发态原子密度和谱线荧光比得到碰撞能量合并过程的截面,对5P3/2激发,碰撞转移得到5D5/2,5D3/2和7S1/2的截面分别是(1.32士0.59)×10-14,(1.18士0.53)×10-14和(3.21士1.44)×10-15cm2;对5P1/2激发,碰撞转移到5D5/2和5D3/2的截面分别是(6.57士2.96)×10-15和(5.90士2.66)×10-15cm2.与其他的实验结果进行了比较.     

单谐振腔外部Q值的计算方法

 通过对带有耦合器的单驻波腔进行等效电路分析，推导出可计算带有耦合波导的单谐振腔外部Q值的反射相位法，该方法通过计算不同频率的反射相位来确定谐振频率和外部Q值。详细叙述了在CST Microwave Studio中用谐振模式求解法、直接时域跟踪法和反射相位法进行计算的步骤；用这3种方法分别计算了二次发射微波电子枪的外部Q值并和实验测量结果做了比较。结果显示3种计算方法都有很高的精度,但反射相位法的速度最快，耗时1 071 s。计算发现外部Q值与耦合口长度的4.1次方成反比。